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| 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application TO-220AB High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1155 Symbol VDSS Ratings 450 Unit V -------------------------------------------------------------------------------------- ---------- 2SK1156 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature VGSS ID ID(pulse)* IDR Pch** Tch Tstg ------ 500 30 5 20 5 50 150 -55 to +150 V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1155, 2SK1156 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SK1155 Symbol V(BR)DSS Min 450 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 -------------------------------------------------------------------------------------- -------- 2SK1156 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1155 V(BR)GSS IGSS IDSS ---- 500 30 -- -- V IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- -- -- -- 10 250 A A -------------------------------------------------------------------------------------- -------- 2SK1156 Gate to source cutoff voltage Static Drain to source on state resistance 2SK1155 VGS(off) RDS(on) 2.0 -- -- |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 2.5 -- -- -- -- -- -- -- -- -- 1.0 1.2 4.0 640 160 20 10 25 50 30 0.95 3.0 1.4 1.5 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 5 A, VGS = 0 IF = 5 A, VGS = 0, diF/dt = 100 A/s ID = 2.5 A, VGS = 10 V, RL = 12 ID = 2.5 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz V --------------------- VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2.5 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------- 2SK1156 -------------------- -------------------------------------------------------------------------------------- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 300 -- ns -------------------------------------------------------------------------------------- 2SK1155, 2SK1156 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 50 20 Drain Current ID (A) Maximum Safe Operation Area 10 0 s O is per Lim at ite ion d b in y R this Ar DS ea (o n 10 5 2 1.0 0.5 0.2 0.1 10 s 40 PW D C O pe 1 = m ) 10 n s m ra s tio (1 = 20 (T sh ot C ) 25 C Ta = 25C ) 0.05 0 50 100 Case Temperature TC (C) 150 1 2SK1156 2SK1155 10 100 300 1,000 3 30 Drain to Source Voltage VDS (V) Typical Output Characteristics 10 10 V 6V 5.5 V Drain Current ID (A) Pulse Test 10 Typical Transfer Characteristics -25C VDS = 20 V Pulse Test 75C 6 TC = 25C 8 Drain Current ID (A) 8 6 5.0 V 4 4.5 V 2 VGS = 4 V 0 10 20 30 40 50 4 2 0 Drain to Source Voltage VDS (V) 4 2 6 8 Gate to Source Voltage VGS (V) 10 2SK1155, 2SK1156 Drain to Source Saturation Voltage VDS (on) (V) Static Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 5 VGS = 10 V 15 V 8 6 5A 2 1.0 0.5 4 2A ID = 1 A 0 8 4 12 16 Gate to Source Voltage VGS (V) 20 2 0.2 0.1 0.5 1.0 2 5 20 10 Drain Current ID (A) 50 Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) 5 VGS = 10 V Pulse Test 4 10 5 2 1.0 0.5 0.2 0.1 0.05 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test -25C TC = 25C 75C 3 ID = 5 A 2 1A 2A 1 0 -40 0 80 120 40 Case Temperature TC (C) 160 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 2SK1155, 2SK1156 Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) 2,000 1,000 500 200 100 50 0.1 10 0 di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test 10,000 Typical Capacitance vs. Drain to Source Voltage Ciss Capacitance C (pF) VGS = 0 f = 1 MHz 1,000 Coss 100 Crss 2 0.5 1.0 0.2 5 Reverse Drain Current IDR (A) 10 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) VDD = 100 V 250 V 400 VDS 400 V 16 20 Gate to Source Voltage VGS (V) 500 Switching Characteristics VGS = 10 V PW = 2 s, duty < 1% Switching Time t (ns) 200 100 td (off) 50 tf 20 10 5 0.1 tr td (on) 300 VGS 200 ID = 5 A 100 VDD = 400 V 250 V 100 V 8 24 32 16 Gate Charge Qg (nc) 12 8 4 0 0 40 0.2 2 0.5 1.0 Drain Current ID (A) 5 10 2SK1155, 2SK1156 Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current IDR (A) Pulse Test 8 6 4 5, 10 V VGS = 0, -10 V 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) 2 Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 ch-c (t) = S (t) * ch-c ch-c = 2.5C/W, TC = 25C PDM PW T 1m 10 m Pulse Width PW (s) 100 m 1 D = PW T 0.02 0.03 0.01 lse Pu hot 1S 0.01 10 100 10 2SK1155, 2SK1156 Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf |
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